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| DMMT3904W MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * * * Epitaxial Planar Die Construction Intrinsically Matched NPN Pair (Note 1) Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance, Available (Note 2) SOT-363 A C2 E2 E1 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 8 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 B C D F H M Mechanical Data * * * * * * * * Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K4A Marking Code & Date Code Information: See Page 2 Weight: 0.015 grams (approx.) B2 B1 C1 0.65 Nominal G H K J K L M a J D F L All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 3) @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG DMMT3904W 60 40 6.0 200 200 625 -55 to +150 Unit V V V mA mW C/W C Characteristic Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Ordering Information Device DMMT3904W-7 Notes: (Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel 1. Built with adjacent die from a single wafer. 2. Contact the Diodes, Inc. Sales department. 3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30311 Rev. 3 - 2 1 of 3 www.diodes.com DMMT3904W Electrical Characteristics @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 3/4 3/4 40 70 100 60 30 3/4 0.65 3/4 3/4 3/4 1.0 0.5 100 1.0 300 3/4 Max 3/4 3/4 3/4 50 50 3/4 3/4 300 3/4 3/4 0.20 0.30 0.85 0.95 4.0 8.0 10 8 400 40 3/4 5.0 Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain (Note 6) hFE 3/4 Collector-Emitter Saturation Voltage (Note 6) Base-Emitter Saturation Voltage (Note 6) SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: VCE(SAT) VBE(SAT) V V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 Cobo Cibo hie hre hfe hoe fT NF pF pF kW x 10-4 3/4 mS MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz td tr ts tf 3/4 3/4 3/4 3/4 35 35 200 50 ns ns ns ns VCC = 3.0V, IC = 10mA, VBE(off) = -0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 5. Short duration test pulse used to minimize self-heating effect. 6. The DC current gain, hFE, (matched at IC = 10mA and VCE = 1.0V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%. Marking Information KJG = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K4A Date Code Key Year Code Month Code 2002 N Jan 1 Feb 2 2003 P March 3 2004 R Apr 4 YM 2005 S May 5 Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 Oct O 2008 V Nov N Dec D DS30311 Rev. 3 - 2 2 of 3 www.diodes.com DMMT3904W 200 15 f = 1MHz NEW PRODUCT 150 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 10 100 5 Cibo 50 Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature 0 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1 IC IB = 10 hFE, DC CURRENT GAIN TA = 125C 100 TA = -25C TA = +25C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 0.01 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 IC IB = 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30311 Rev. 3 - 2 3 of 3 www.diodes.com DMMT3904W |
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